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Define common-gate configuration in field-effect transistors (FETs).

1 Answer

The common-gate (CG) configuration is one of the three primary configurations used in field-effect transistors (FETs), the other two being common-source (CS) and common-drain (CD) configurations. In the common-gate configuration, the gate terminal of the FET is connected to a common point, typically a fixed voltage level (DC bias), while the source and drain terminals are used for input and output connections.

Here are some key characteristics of the common-gate configuration:

Input at the Source: The input signal is applied to the source terminal, which is grounded (connected to a reference point). This makes the source terminal the common input point.

Output at the Drain: The output is taken from the drain terminal, which provides the amplified output signal.

Gate Bias: The gate terminal is connected to a fixed bias voltage. This bias voltage determines the operating point of the FET and sets the level of signal amplification. The bias voltage is usually chosen in such a way that the FET operates in the saturation region.

Voltage Gain: The common-gate configuration can provide voltage gain, making it suitable for amplification applications. The output voltage can be larger than the input voltage due to the amplification process.

Input-Output Phase Relationship: The common-gate configuration typically results in an inverted output signal with respect to the input signal. This means that when the input voltage increases, the output voltage decreases, and vice versa.

High Input Impedance, Low Output Impedance: The common-gate configuration generally offers a high input impedance, making it less demanding on the driving source. However, the output impedance tends to be relatively low.

Frequency Response: The common-gate configuration can have relatively wider bandwidth compared to the common-source configuration, making it suitable for high-frequency applications.

Amplification Factor: The transconductance (change in drain current with respect to change in gate-source voltage) of the FET in common-gate configuration determines the amplification factor. It is denoted as "gm" and is a key parameter for determining the voltage gain.

The common-gate configuration is often used in RF (radio frequency) amplifier circuits and other applications where its characteristics are advantageous. However, like all FET configurations, it has its own set of advantages and limitations that need to be considered when designing electronic circuits.
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