A magnetic field sensor based on the magnetoresistive effect is a type of sensor that utilizes the changes in electrical resistance of certain materials in response to an applied magnetic field. The magnetoresistive effect is the property of a material to change its electrical resistance when exposed to a magnetic field. This phenomenon can be exploited to create highly sensitive and accurate magnetic field sensors, which find applications in various fields such as consumer electronics, automotive, industrial automation, and scientific research.
There are two main types of magnetoresistive sensors:
Giant Magnetoresistance (GMR) Sensor: Giant Magnetoresistance is a quantum mechanical effect that occurs in certain layered structures, where the electrical resistance changes significantly in response to an applied magnetic field. GMR sensors consist of thin layers of ferromagnetic and non-magnetic materials arranged in a specific way to maximize the effect. When a magnetic field is applied, the relative orientation of the magnetic layers changes, leading to a change in resistance. GMR sensors are commonly used in hard disk drives, magnetic field measurement devices, and magnetic field imaging systems.
Anisotropic Magnetoresistance (AMR) Sensor: Anisotropic Magnetoresistance is another magnetoresistive effect that occurs in certain ferromagnetic materials. In AMR sensors, the electrical resistance varies with the angle between the direction of the electrical current and the direction of the magnetic field. These sensors are simpler in structure compared to GMR sensors and are commonly used in applications like magnetic compasses, automotive direction detection, and position sensing.
Both GMR and AMR sensors offer advantages over traditional magnetic sensors, such as Hall effect sensors, in terms of sensitivity, size, power consumption, and cost-effectiveness. They can detect even weak magnetic fields with high precision, making them valuable tools in various electronic devices and industrial applications.