Breakdown voltage, also known as the "reverse breakdown voltage" or "avalanche voltage," is a crucial characteristic in diodes and other semiconductor devices. It refers to the minimum voltage at which a diode or semiconductor junction transitions from its normal operating mode, where it allows only a small reverse current (leakage current), into a state of rapid and uncontrollable increase in reverse current, leading to a breakdown of the device's behavior.
There are two main types of breakdown that can occur in diodes:
Zener Breakdown: This occurs in Zener diodes and other specially designed diodes. In these diodes, the breakdown is a controlled phenomenon that allows the diode to operate in the reverse breakdown region without getting damaged. Zener breakdown occurs due to the avalanche effect or quantum tunneling, and it leads to a relatively stable and predictable reverse current.
Avalanche Breakdown: This occurs in most other diodes and semiconductor devices when the reverse bias voltage exceeds a certain critical value. As the reverse bias voltage increases beyond the breakdown voltage, the electric field across the depletion region of the diode becomes strong enough to liberate electrons from the valence band, creating an "avalanche" of electron-hole pairs. This results in a rapid increase in reverse current, and the diode can become damaged due to excessive heat and current if not properly protected.
Understanding the breakdown voltage is important because it sets a limit on the maximum reverse voltage that a diode can withstand without experiencing a catastrophic breakdown. Manufacturers specify this value for various semiconductor devices, allowing engineers to design circuits that prevent the diodes from entering the breakdown region and ensure the reliable operation of the devices.