The voltage requirement for the operation of a high-voltage electron beam lithography (EBL) system in nanofabrication can vary significantly depending on the specific design and technology of the system. Electron beam lithography is a technique used to create fine patterns on a substrate at the nanoscale level by using a focused beam of electrons.
Generally, in electron beam lithography systems, the accelerating voltage can range from a few kilovolts (kV) to hundreds of kilovolts, or even higher in some specialized systems. The choice of voltage depends on various factors, including the desired resolution, the thickness and material of the sample, and the system's design.
Higher accelerating voltages can lead to higher electron energies, which in turn can provide better penetration through thicker samples and improved resolution for finer patterning. However, higher voltages also come with challenges such as increased electron scattering and potential damage to the sample due to the higher energy electrons.
It's important to note that the specific voltage requirement can vary based on the design of the electron optics, the sample preparation techniques, and the intended application of the nanofabrication process. If you are working with or considering using a high-voltage electron beam lithography system, I recommend consulting the manufacturer's specifications and guidelines for the appropriate operating voltage for your specific setup.