A Schottky diode, also known as a hot carrier diode, is a semiconductor device that serves as a type of diode with unique characteristics compared to conventional p-n junction diodes. It is named after the German physicist Walter H. Schottky, who contributed to its development.
The key difference between a Schottky diode and a regular p-n junction diode lies in their construction and the way they function. A Schottky diode is constructed using a metal-semiconductor junction rather than the p-n semiconductor junction found in conventional diodes. The metal part is usually a metal layer (e.g., gold, platinum, or tungsten) and the semiconductor is typically n-type (although p-type Schottky diodes exist as well).
Here's a basic explanation of how a Schottky diode works:
Metal-Semiconductor Junction: In a Schottky diode, the metal and the semiconductor form a junction. When the metal comes into contact with the semiconductor, it creates a Schottky barrier at the interface.
Barrier Height: The Schottky barrier causes a potential energy barrier that electrons have to overcome when moving from the semiconductor to the metal. The height of this barrier is generally lower than the potential barrier in a p-n junction diode. As a result, Schottky diodes have lower forward voltage drops (typically around 0.2 to 0.5 volts) compared to standard diodes (which have around 0.6 to 0.7 volts).
Fast Switching Speed: Due to the lower barrier height, Schottky diodes have faster switching speeds and lower switching losses, making them suitable for high-frequency applications.
Reverse Recovery Time: Unlike regular diodes, Schottky diodes have almost no reverse recovery time, meaning they switch off quickly when the polarity reverses, leading to reduced switching noise and improved efficiency.
Schottky diodes find numerous applications in electronics, such as rectification, voltage clamping, and protection circuits. Their fast switching characteristics make them valuable in high-frequency applications, such as radio frequency (RF) circuits, switching power supplies, and signal mixers.
It's worth noting that Schottky diodes have some limitations, too. Their relatively lower breakdown voltage and higher reverse leakage current compared to p-n junction diodes make them less suitable for high-voltage and high-power applications. However, for their intended applications, Schottky diodes offer advantages that make them a preferred choice in many situations.