The on-state voltage drop, also known as the "on-state resistance" or "drain-source resistance," refers to the voltage drop that occurs between the drain and source terminals of a power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) when it is in the conducting state. In this state, the MOSFET allows current to flow from the drain to the source terminals, enabling the device to act as a switch or amplifier for various electronic applications.
The on-state voltage drop is primarily caused by the intrinsic resistance of the channel formed in the semiconductor material beneath the MOSFET's gate when it is turned on. This resistance is often denoted as "Rds(on)," and it is a critical parameter to consider in power MOSFETs, especially in high-power applications. A lower on-state voltage drop (lower Rds(on)) indicates that the MOSFET has better conductivity in its conducting state, leading to reduced power losses, less heat generation, and improved overall efficiency in the circuit.
Power MOSFETs with lower on-state voltage drops are preferred in applications where minimizing energy losses and maximizing efficiency are crucial, such as power supplies, motor control, and various switching applications. Therefore, designers often choose MOSFETs with lower Rds(on) values to optimize their circuits for reduced power dissipation and improved performance.