High-voltage electron beam lithography (EBL) systems are used in nanofabrication processes to create patterns at a very fine scale. The voltage requirement for such systems can vary based on the specific design, technology, and intended application. However, in general, high-voltage electron beam lithography systems typically operate in the range of a few kilovolts (kV) to several tens of kilovolts.
Voltages in the range of 10 kV to 100 kV are common for many high-voltage EBL systems. This voltage range allows for the acceleration of electrons to high energies, which results in a smaller electron wavelength and improved resolution for patterning extremely fine features. The higher the accelerating voltage, the better the resolution that can be achieved due to the shorter wavelength of the electrons.
It's important to note that the exact voltage requirement can depend on various factors, including the type of resist being used, the size of the features being patterned, the desired resolution, and the capabilities of the specific EBL system being employed. Different research and industrial EBL systems might have varying voltage specifications to meet the particular needs of their applications.
For the most accurate and up-to-date information regarding the voltage requirement of a specific high-voltage electron beam lithography system, it's recommended to consult the system's technical specifications provided by the manufacturer or research institution.