High-voltage electron beam lithography systems used in nanofabrication typically require voltages in the range of tens of kilovolts (kV) to hundreds of kilovolts. The specific voltage requirement can vary depending on the design and capabilities of the system, as well as the intended application.
Electron beam lithography is a nanofabrication technique that uses a focused beam of electrons to write patterns onto a substrate coated with a resist material. This process allows for the creation of very fine features at the nanometer scale, making it a crucial tool in the field of nanotechnology.
The high voltage applied to the electron beam is used to accelerate the electrons to high energies, which enables them to have a shorter wavelength and better resolution when used to write patterns on the substrate. This high-energy electron beam can precisely expose the resist material, enabling the creation of intricate and small structures.
It's important to note that the exact voltage requirement can vary between different manufacturers and models of electron beam lithography systems. The specific voltage used will depend on factors such as the desired resolution, the size of the features being fabricated, the material properties of the substrate and resist, and the overall design of the system.